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  4. Sub-100μW low power operation of vibrating body FETs
 
conference paper

Sub-100μW low power operation of vibrating body FETs

Grogg, D.
•
Ionescu, A. M.  
2009
International Symposium on VLSI Technology, Systems, and Applications, Proceedings
International Symposium on VLSI Technology, Systems and Applications

This paper reports the low power operation of Vibrating Body Field Effect Transistors as active resonators for communication applications. For the first time we report active resonators operating at 2MHz and 20MHz with power consumption less than 100μW and Quality factors in the order of 3000. This performance opens new applications of devices for wireless sensor networks. ©2009 IEEE.

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Type
conference paper
DOI
10.1109/VTSA.2009.5159324
Web of Science ID

WOS:000272451000058

Author(s)
Grogg, D.
Ionescu, A. M.  
Date Issued

2009

Publisher

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa

Published in
International Symposium on VLSI Technology, Systems, and Applications, Proceedings
Start page

129

End page

130

Editorial or Peer reviewed

NON-REVIEWED

Written at

EPFL

EPFL units
NANOLAB  
Event nameEvent placeEvent date
International Symposium on VLSI Technology, Systems and Applications

Hsinchu, TAIWAN

Apr 27-29, 2009

Available on Infoscience
November 8, 2010
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/57231
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