ZnSe growth on lattice-matched InxGa1-xAs substrates
The properties of ZnSe epilayers fabricated by molecular beam epitaxy on lattice-matched InxGa1-xAs buffers grown on GaAs(001) substrates have been investigated by means of photoluminescence spectroscopy and transmission electron microscopy. For suitable values of x and ternary-layer thickness, the partial character of the strain relaxation within the III-V layer can be compensated for, minimizing the residual strain in the ZnSe overlayer. Large reductions in the dislocation density and Y-line emission as compared to conventional ZnSe/GaAs heterostructures can be reproducibly obtained.
WOS:000075488600005
1998
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3-4
693
700
INFM, Lab Nazl TASC, I-34012 Trieste, Italy. Univ Lecce, Dipartimento Sci Mat, I-73100 Lecce, Italy. Ecole Polytech Fed Lausanne, Inst Micro & Optoelect, Dept Phys, CH-1015 Lausanne, Switzerland. Heun, S, INFM, Lab Nazl TASC, Area Ricerca,Padriciano 99, I-34012 Trieste, Italy.
ISI Document Delivery No.: 112HT
Cited Reference Count: 37
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