Efficient, narrow linewidth excitonic emission at room temperature from GaAs/AlGaAs V-groove quantum wire light-emitting diodes
We report on efficient, narrow linewidth exciton recombination in GaAs/AlGaAs V-groove quantum wire light-emitting diodes at room temperature. The high efficiency is due to a selective carrier injection mechanism resulting in an estimated internal quantum efficiency of similar to 20% with an electroluminescence (EL) linewidth as narrow as 15 meV. The thermal broadening contribution to the linewidth is 6 meV due to exciton scattering with optical phonons. An analysis of the EL peak shift in a magnetic field points out the typical superlinear behavior of the excitonic binding energy for a quantum wire. (C) 2001 American Institute of Physics.
WOS:000170590800060
2001
79
9
1402
1402
Swiss Fed Inst Technol, Dept Phys, CH-1015 Lausanne, Switzerland. Weman, H, Swiss Fed Inst Technol, Dept Phys, CH-1015 Lausanne, Switzerland.
ISI Document Delivery No.: 465LQ
Cited Reference Count: 1
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