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  4. A Design Oriented Charge-based Current Model for Symmetric DG MOSFET and its Correlation with the EKV Formalism
 
research article

A Design Oriented Charge-based Current Model for Symmetric DG MOSFET and its Correlation with the EKV Formalism

Sallese, J.-M.  
•
Krummenacher, F.  
•
Pregaldiny, F.
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2005
Solid-State Electronics

We propose a design oriented charge-based model for undoped DG MOSFETs under symmetrical operation that aims at giving a comprehensive understanding of the device from the design strategy. In particular, we introduce useful normalizations for current and charges that in turn lead to very simple relationships among the physical quantities. Finally, we emphasize on the link that exists between this approach and the EKV formalism derived for bulk MOSFETs, which in turn leads to the unique gms/ID design methodology for DG architectures. © 2004 Elsevier Ltd. All rights reserved.

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Type
research article
DOI
10.1016/j.sse.2004.11.013
Web of Science ID

WOS:000226942300029

Author(s)
Sallese, J.-M.  
Krummenacher, F.  
Pregaldiny, F.
Lallement, C.
Roy, A. S.  
Enz, C.  
Date Issued

2005

Published in
Solid-State Electronics
Volume

49

Issue

3

Start page

485

End page

489

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

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Available on Infoscience
May 16, 2007
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/6894
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