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research article

Scalable general high voltage MOSFET model including quasi-saturation and self-heating effects

Chauhan, Y. S.  
•
Anghel, C.
•
Krummenacher, F.
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2006
Solid-State Electronics
  • Details
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Type
research article
DOI
10.1016/j.sse.2006.09.002
Web of Science ID

WOS:000243272000022

Author(s)
Chauhan, Y. S.  
Anghel, C.
Krummenacher, F.
Maier, C.
Gillon, R.
Bakeroot, B.
Desoete, B.
Frere, S.
Baguenier Desormeaux, A.
Sharma, A.
Date Issued

2006

Published in
Solid-State Electronics
Volume

50

Issue

11-12

Start page

1801

End page

1813

Editorial or Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
NANOLAB  
Available on Infoscience
May 16, 2007
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/6968
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