conference paper
Enhanced magnetoresistance of semiconductor-metal hybrid structures
Holz, M.
•
Kronenwerth, O.
•
Grundler, D.
2005
PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27
Semiconductor-metal hybrid structures can show a large magnetoresistance effect, the extraordinary magnetoresistance (EMR) effect. In this work, we study theoretically the influence of the voltage probe configuration on the magnetoresistance of such hybrid structures. We find a configuration, in which the current sensitivity of the device is enhanced considerably if compared to the probe configuration discussed so far in the literature. We argue that this enhancement is due to the combination of the EMR effect and the Hall effect in the hybrid structure.
Type
conference paper
Author(s)
Holz, M.
Kronenwerth, O.
Grundler, D.
Date Issued
2005
Publisher
Published in
PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27
ISBN of the book
0735402574
Series title/Series vol.
AIP Conference Proceedings; 772
Start page
431
End page
432
Subjects
Editorial or Peer reviewed
REVIEWED
Written at
OTHER
EPFL units
| Event name | Event place | Event date |
Flagstaff, Arizona (USA) | 26-30 July 2004 | |
Available on Infoscience
July 7, 2015
Use this identifier to reference this record