Repository logo

Infoscience

  • English
  • French
Log In
Logo EPFL, École polytechnique fédérale de Lausanne

Infoscience

  • English
  • French
Log In
  1. Home
  2. Academic and Research Output
  3. Conferences, Workshops, Symposiums, and Seminars
  4. Electron density of states at Ge/oxide interfaces due to GeOx formation
This is not the latest version of this item. The latest version can be found here.
 
conference paper

Electron density of states at Ge/oxide interfaces due to GeOx formation

Binder, Jan Felix  
•
Broqvist, Peter  
•
Pasquarello, Alfredo  
2011
Microelectronic Engineering
EMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials

An atomistic model of substoichiometric germanium oxide is generated through ab initio molecular dynamics. The resulting structure shows a predominance of threefold coordinated Ge and O atoms. We also generate substoichiometric models through bond-switching Monte-Carlo simulations, which preserve the fourfold Ge and the twofold O coordinations. These differing structures are energetically competitive. Alignment of their electron densities of states to that of GeO2 reveals that the band-gap reduction is similar for both structures, mainly occurring through a shift of the valence band edge. (C) 2010 Elsevier B.V. All rights reserved.

  • Details
  • Versions
  • Metrics
Type
conference paper
DOI
10.1016/j.mee.2010.09.006
Web of Science ID

WOS:000288524100017

Author(s)
Binder, Jan Felix  
Broqvist, Peter  
Pasquarello, Alfredo  
Date Issued

2011

Publisher

Elsevier

Published in
Microelectronic Engineering
Volume

88

Start page

391

End page

394

Subjects

Substoichiometric oxides

•

Bond energy

•

Core-Level Shifts

•

Si

•

Pseudopotentials

•

Oxygen

•

Band

Editorial or Peer reviewed

NON-REVIEWED

Written at

EPFL

EPFL units
CSEA  
Event nameEvent placeEvent date
EMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials

Strasbourg, FRANCE

Jun 07-11, 2010

Available on Infoscience
December 16, 2011
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/74309
Logo EPFL, École polytechnique fédérale de Lausanne
  • Contact
  • infoscience@epfl.ch

  • Follow us on Facebook
  • Follow us on Instagram
  • Follow us on LinkedIn
  • Follow us on X
  • Follow us on Youtube
AccessibilityLegal noticePrivacy policyCookie settingsEnd User AgreementGet helpFeedback

Infoscience is a service managed and provided by the Library and IT Services of EPFL. © EPFL, tous droits réservés