conference paper
MOS Transistor Modeling for RF IC Design
2000
Proc.of the Gallium Arsenide and other Semiconductor Application Symposium (GAAS 2000)
Cite this item
Enz, C. (2000). MOS Transistor Modeling for RF IC Design. Proc.Of the Gallium Arsenide and Other Semiconductor Application Symposium (GAAS 2000), 536–539. https://infoscience.epfl.ch/handle/20.500.14299/51117
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Type
conference paper
Author(s)
Date Issued
2000
Published in
Proc.of the Gallium Arsenide and other Semiconductor Application Symposium (GAAS 2000)
Start page
536
End page
539
Subjects
Note
(invited)
Editorial or Peer reviewed
REVIEWED
Written at
EPFL
EPFL units
Available on Infoscience
June 24, 2010
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