Long-wavelength edge-emitting lasers on gallium arsenide using InAs quantum dots embedded in InGaAs

Fiore, A.; Oesterle, U.; Houdré, R.; Vez, D.; Stanley, R. P.; Ilegems, M.

conference paper

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2000

Compound Semiconductors 1999

26th International Symposium on Compound Semiconducors

We demonstrate edge-emitting lasers based on self-assembled InAs quantum dots (QDs) on GaAs substrates. The InAs QDs are embedded in an InGaAs quantum well (QW) to red-shift the lasing transition. The lasers emit at lambda=1.2 mum with threshold current densities approximate to100 A/cm(2). Maximum modal gains on the order of 5 cm(-1) are deduced for a single QD sheet.

Cite this item

Fiore, A., Oesterle, U., Houdré, R., Vez, D., Stanley, R. P., & Ilegems, M. (2000). Long-wavelength edge-emitting lasers on gallium arsenide using InAs quantum dots embedded in InGaAs. Compound Semiconductors 1999, Institute of Physics Conference Series; 166, 273–276. https://infoscience.epfl.ch/handle/20.500.14299/11419

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