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  4. A Novel Extraction Method and Compact Model for the Steepness Estimation of FDSOI TFET Lateral Junction
 
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research article

A Novel Extraction Method and Compact Model for the Steepness Estimation of FDSOI TFET Lateral Junction

Dan, Surya S.
•
Biswas, Arnab  
•
Royer, Cyrille Le
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2012
IEEE Electron Device Letters

There are several techniques for junction profiling available in literature, yet none of them are practically suitable for the accurate determination of the lateral junction steepness in TFET devices, which is the most important parameter influencing TFET performance. In this work, a simple physics-based compact analytical model has been developed for the junction steepness as a function of the doping concentration and the maximum electric field at the junction. Using the underlying physics, we report a novel yet simple method to estimate the lateral junction steepness using only the Id-Vd measurements on a tunnel diode test structure fabricated on the same wafer as the TFET with common process steps. Assuming that doping concentration, Si thin-film thickness, and buried-oxide thickness are known from the fabrication process, this algorithm uses the maximum electric field extracted from the Id-Vd measurements and applies the analytical model to estimate the junction steepness. It has been observed that the estimations based on this method have a maximum deviation of sub-0.2 nm/decade from the actual junction steepness of the investigated devices.

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Type
research article
DOI
10.1109/LED.2011.2174027
Web of Science ID

WOS:000299812300004

Author(s)
Dan, Surya S.
•
Biswas, Arnab  
•
Royer, Cyrille Le
•
Grabinski, Wladyslaw  
•
Ionescu, Adrian M.  
Date Issued

2012

Publisher

Institute of Electrical and Electronics Engineers

Published in
IEEE Electron Device Letters
Volume

33

Issue

2

Start page

140

End page

142

Subjects

FP7 STEEPER

URL

URL

http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=6095582
Peer reviewed

REVIEWED

Written at

EPFL

EPFL units
NANOLAB  
Available on Infoscience
December 13, 2011
Use this identifier to reference this record
https://infoscience.epfl.ch/handle/20.500.14299/73161
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