Carron, RomainFekete, DanGallo, PascalRudra, AlokFelici, MarcoBartova, BarboraCantoni, MarcoKapon, Elyahou2011-09-152011-09-152011-09-15201110.1063/1.3610950https://infoscience.epfl.ch/handle/20.500.14299/70955WOS:000294739100007Site-controlled InGaAsN quantum wires (QWRs) emitting at 1.3 lm at room temperature were grown on V-grooved GaAs substrates by modulated-flux metallorganic vapor phase epitaxy. The nonplanar substrate template is shown to enhance the nitrogen uptake, evidenced by a redshift in photoluminescence wavelength twice larger for the QWRs than for the adjacent quantum well regions. The mechanism of this increase in nitrogen incorporation efficiency, achieved without degradation in optical properties, is explained by the extended gradient of In content at the step-rich QWR interfaces.Band ParametersMovpe GrowthSemiconductorsGainnasDotsEmissionAlloysLaserGaastext::journal::journal article::research article