Stuetzel, Eberhard UlrichBurghard, MarkoKern, KlausTraversi, FlorianoNichele, FabrizioSordan, Roman2011-12-162011-12-162011-12-16201010.1002/smll.201000854https://infoscience.epfl.ch/handle/20.500.14299/74818WOS:000285793900004Field-Effect TransistorsSuspended GrapheneFabricationHysteresisTransportNanowiresStabilityMobilityA Graphene Nanoribbon Memory Celltext::journal::journal article::research article