Sharp high-resolution Si 2p core level on the Sb-terminated Si(111) surface: Evidence for charge transfer

Cricenti, A.Quaresima, C.Ottaviani, C.Ferrari, L.Perfetti, P.Crotti, C.Le Lay, G.Margaritondo, G.2006-10-032006-10-032006-10-03200010.1103/PhysRevB.62.9931https://infoscience.epfl.ch/handle/20.500.14299/234830WOS:0000899771000172781An Sb/Si(lll)root 3x root3 surface has been studied by high-resolution core-level spectroscopy. All the components of the Si 2p core level related to the clean surface have disappeared, and one strong Sb-induced component could be identified at a binding energy +0.13 eV with respect to the bulk peak. Such a component is mainly due to charge transfer between Si atoms at the top layer and Sb trimers. Two more small components are observed: one at +0.29 eV, due to Sb atoms residing at a different position, and one at -0.14 eV, due to local disorder. On the Si 2p core level taken in bulk sensitive mode, we found a very narrow bulk component with a total full width at half maximum of 130 meV at T=100 K.SCANNING TUNNELING MICROSCOPYEPITAXIAL-GROWTHPHOTOEMISSIONSPECTROSCOPYGESI(100)SHIFTSSharp high-resolution Si 2p core level on the Sb-terminated Si(111) surface: Evidence for charge transfertext::journal::journal article::research article