Portmann, LionelKayal, MaherPastre, MarcBlagojevic, MarijaDeclercq, Michel2017-06-132017-06-132017-06-132005https://infoscience.epfl.ch/handle/20.500.14299/138365There are many inventions described and illustrated herein. In a first aspect, the present invention is a technique and circuitry for reading data that is stored in memory cells. In one embodiment of this aspect, the present invention is a technique and circuitry for generating a reference current that is used, in conjunction with a sense amplifier, to read data that is stored in memory cells of a DRAM device. The technique and circuitry for generating a reference current may be implemented using an analog configuration, a digital configuration, and/or combinations of analog and digital configurations.patentDE602004014269AT397779EP1620859US2008119918EP1620859US6980461US2005162931US6912150WO2004102631EP1620859WO2004102631US20042271663941789333425219