Castiglia, A.Feltin, E.Dorsaz, J.Cosendey, G.Carlin, J. F.Butte, R.Grandjean, N.2010-10-052010-10-052010-10-05200810.1049/el:20080495https://infoscience.epfl.ch/handle/20.500.14299/55049WOS:000255414900012A report is presented on InGaN/GaN multiple quantum well laser diodes, grown by metal organic vapour phase epitaxy on c-plane sapphire substrates, including an Al0.83In0.17N cladding layer lattice-matched to GaN. Lasing action is demonstrated for gain-guided devices at room temperature under pulsed current injection conditions. Direct comparison with structures including only a standard Al0.07Ga0.93N bottom cladding shows an improved optical confinement. This is exemplified by a decreased threshold current density.text::journal::journal article::research article