Latu-Romain, L.Mouchet, C.Cayron, C.Rouviere, E.Simonato, J.-P.2014-11-142014-11-142014-11-14200810.1007/s11051-007-9350-3https://infoscience.epfl.ch/handle/20.500.14299/108858In this paper the effect of varying temperature, pressure and chemical precursors on the vapour-liquid-solid (VLS) growth of silicon nanowires (Si NWs) have been investigated. Some aspects of nucleation and growth mechanisms are discussed. Control on Si NW morphology by varying the choice of gaseous precursor (silane or dichlorosilane) at elevated temperatures is reported. © 2008 Springer Science+Business Media B.V.articleBusiness mediaChemical precursorschemical reactionDichlorosilane (DCS)Electric wireElevated temperaturesEpitaxial growthGas precursorGrowth parametersHigh temperaturemolecular electronicsNanostructured materialsNanostructuresnanowireNanowiresNonmetalsNucleation and growth mechanismsparticle sizepressurepriority journalsemiconductorShape controlsilane derivativeSilanesSiliconSilicon nanowiresSilicon nanowires (SiNWs)solid lipid nanoparticleSurrounding environmentSynthesistemperatureVarying temperatureVLS methodstext::journal::journal article::research article