Qi, LinMok, K. R. C.Aminian, MahdiCharbon, EdoardoNanver, Lis K.2014-12-302014-12-302014-12-30201410.1109/Ted.2014.2351576https://infoscience.epfl.ch/handle/20.500.14299/109743WOS:000344544200028A single-photon avalanche diode with high sensitivity in the ultraviolet (UV) wavelength range has been fabricated on Si using pure boron chemical vapor deposition to create both a nanometer-thin anode junction and a robust light entrance window. The device shows high sensitivity at the wavelengths of 330-370 nm when operated in the Geiger mode and good selectivity for UV light without applying a capping filter. The dark count rates can be as low as 5 Hz at room temperature for an active area of 7 mu m(2). An implicit guard ring, using an n-enhancement implantation in the central region of the diode, is applied instead of peripheral diffused p-type guard rings to achieve a high fill factor.Avalanche breakdownboronchemical vapor deposition (CVD)Geiger-mode avalanche photodiodesingle-photon avalanche diode (SPAD)ultrashallow junctionsultraviolet (UV)text::journal::journal article::research article