Tsamados, DimitriosCvetkovic, Nenad V.Sidler, KatrinBhandari, JyotshnaSavu, VeronicaBrugger, JuergenIonescu, Adrian M.2010-05-042010-05-042010-05-04201010.1016/j.sse.2010.04.019https://infoscience.epfl.ch/handle/20.500.14299/49931WOS:000280322300029In this work double-gate pentacene TFT architecture is proposed and experimentally investigated. The devices are fabricated on a polyimide substrate based on a process that combines three levels of stencil lithography with standard photolithography. Similarly to the operation of a conventional double-gate silicon FET, the top-gate bias modulates the threshold voltage of the bottom-gate transistor and significantly improves the transistor sub-threshold swing and leakage current. Moreover, the double gate TFT shows good promise for the enhancement of I-ON/I-OFF, especially by the control of I-OFF in devices with poor top interfaces. (C) 2010 Elsevier Ltd. All rights reserved.Double-gatePentaceneOrganic TFTStencil lithographyTransporttext::journal::journal article::research article