Jazaeri, FarzanBarbut, LucianSallese, Jean-Michel2013-08-072013-08-072013-08-07201310.1109/TED.2013.2261073https://infoscience.epfl.ch/handle/20.500.14299/93957WOS:000320870000005We investigate the technological con-strains and design limitations of ultrathin body junctionless dou- ble gate MOSFET (JL DG MOSFET). Relationships between the silicon thickness and the doping concentration compatible with design requirements in terms of OFF-state-current and voltages are obtained and validated with TCAD simulations. This set of analytical expressions can be used as a guideline for technology optimization of JL DG MOSFETS.Compact modeldouble gate MOSFETSjunctionlessnanowireOFF-state-currentsubthresholdModeling and Design Space of Junctionless Symmetric DG MOSFETs With Long Channeltext::journal::journal article::research article