Bizzarri, MarcoBoscardin, MaurizioCaprai, MircoCaricato, Anna PaolaCirone, Giusuppe Antonio PabloCrivalleri, MicheleCupparo IlariaCuttone, GiacomoDunand, SylvainFano, LivioHammad Ali, OmarIonica, MariaKanxheri, KeidaLarge, MatthewMaruccio, GiuseppeMonteduro, Anna GraziaMoscatelli, FrancescoMorozzi, AriannaPapi, AndreaPasseri, AlessandroPetasecca, MarcoRizzato, SilviaRossi, AlessandroScorzoni, AndreaServoli, LeonelloTalamonti, CinziaVerzellesi, GiovanniWyrsch, NicolasMenichelli, MauroBizzarri, MarcoBoscardin, MaurizioCaprai, MircoCaricato, Anna PaolaCirrone, Giuseppe Antonio PabloCrivellari, MicheleCupparo, IlariaCuttone, GiacomoDunand, SilvainFanò, LivioAlì, Omar HammadIonica, MariaKanxheri, KeidaLarge, MatthewMaruccio, GiuseppeMonteduro, Anna GraziaMoscatelli, FrancescoMorozzi, AriannaPapi, AndreaPasseri, DanielePetasecca, MarcoRizzato, SilviaRossi, AlessandroScorzoni, AndreaServoli, LeonelloTalamonti, CinziaVerzellesi, GiovanniWyrsch, Nicolas2022-05-312022-05-312022-05-312021-10-0810.3390/instruments5040032https://infoscience.epfl.ch/handle/20.500.14299/188202Hydrogenated amorphous silicon (a-Si:H) can be produced by plasma-enhanced chemical vapor deposition (PECVD) of SiH4 (silane) mixed with hydrogen. The resulting material shows outstanding radiation hardness properties and can be deposited on a wide variety of substrates. Devices employing a-Si:H technologies have been used to detect many different kinds of radiation, namely, minimum ionizing particles (MIPs), X-rays, neutrons, and ions, as well as low-energy protons and alphas. However, the detection of MIPs using planar a-Si:H diodes has proven difficult due to their unsatisfactory S/N ratio arising from a combination of high leakage current, high capacitance, and limited charge collection efficiency (50% at best for a 30 µm planar diode). To overcome these limitations, the 3D-SiAm collaboration proposes employing a 3D detector geometry. The use of vertical electrodes allows for a small collection distance to be maintained while preserving a large detector thickness for charge generation. The depletion voltage in this configuration can be kept below 400 V with a consequent reduction in the leakage current. In this paper, following a detailed description of the fabrication process, the results of the tests performed on the planar p-i-n structures made with ion implantation of the dopants and with carrier selective contacts are illustrated.solid-state detectorsposition detectorsradiation hard detectorhydrogenated amorphous silicon3D detectortext::journal::journal article::research article