Ronci, F.Cricenti, A.Perfetti, L.Berger, H.Grioni, M.Colonna, S.2010-04-072010-04-072010-04-07200510.1103/PhysRevLett.94.036405https://infoscience.epfl.ch/handle/20.500.14299/49162WOS:000226604700054In this Letter we report the observation, by scanning tunneling microscopy, of a Mott metal to insulator transition at the surface of 1T-TaSe2. Our spectroscopic data compare considerably well with previous angle-resolved photoemission spectroscopy measurements and confirm the presence of a large hysteresis related to a first order process. The local character of the tunneling spectroscopy technique allows a direct visualization of the surface symmetry and provides spectroscopic measurements on the defect-free region of the sample. It follows that the electronic localization is driven purely by the enhancement of the charge density wave amplitude which drives a bandwidth controlled metal-insulator transition.Charge-Density WavesTemperatureTransitions2H-Tase2Statetext::journal::journal article::research article