Sacchetto, DavideBobba, Shashi KanthGaillardon, Pierre-emmanuel Julien MarcLeblebici, YusufDe Micheli, GiovanniDemirci, Tugba2017-05-112017-05-112017-05-112016https://infoscience.epfl.ch/handle/20.500.14299/137304A bipolar resistive switching device including an electrically conductive bottom electrode, a stack of transition metal oxides layers, a number of transition metal oxide layers being equal or greater than 2, the stack including: at least one MOx layer, at least one oxygen gettering layer NOy, wherein the resistive switching device further includes an electrically conductive top electrode.patentUS2016322101US9412940US2015200363WO2014020478WO201402047849223828