Hwu, Y.Marsi, M.Almeras, P.Margaritondo, G.2006-10-032006-10-032006-10-03199210.1103/PhysRevB.46.1835https://infoscience.epfl.ch/handle/20.500.14299/234561WOS:A1992JE62600072We have modified the Schottky-barrer height of Si overlayers on Ag(111) substrates by means of Cs intralayers of different thicknesses. We also found a correlation between these changes and those of the work function, which makes it possible to measure the true value of the S parameter.text::journal::journal article::research article