Stachurski, JohannTamariz, SebastianCallsen, GordonButte, RaphaelGrandjean, Nicolas2022-05-232022-05-232022-05-232022-04-2810.1038/s41377-022-00799-4https://infoscience.epfl.ch/handle/20.500.14299/188059WOS:000788327100001Y III-nitride quantum dots (QDs) are a promising system actively studied for their ability to maintain single photon emission up to room temperature. Here, we report on the evolution of the emission properties of self-assembled GaN/ AlN QDs for temperatures ranging from 5 to 300 K. We carefully track the photoluminescence of a single QD and measure an optimum single photon purity of g((2))(0) = 0.05 +/- 0.02 at 5 K and 0.17 +/- 0.08 at 300 K. We complement this study with temperature dependent time-resolved photoluminescence measurements (TRPL) performed on a QD ensemble to further investigate the exciton recombination dynamics of such polar zero-dimensional nanostructures. By comparing our results to past reports, we emphasize the complexity of recombination processes in this system. Instead of the more conventional mono-exponential decay typical of exciton recombination, TRPL transients display a bi-exponential feature with short- and long-lived components that persist in the low excitation regime. From the temperature insensitivity of the long-lived excitonic component, we first discard the interplay of dark-to-bright state refilling in the exciton recombination process. Besides, this temperature-invariance also highlights the absence of nonradiative exciton recombinations, a likely direct consequence of the strong carrier confinement observed in GaN/AlN QDs up to 300 K. Overall, our results support the viability of these dots as a potential single-photon source for quantum applications at room temperature.Opticshexagonal boron-nitridespectral diffusionlight emissionfine-structureepitaxyalnrelaxationexcitonstext::journal::journal article::review article