Inhomogeneous Strain Relaxation and Defect Distribution of Znte Layers Deposited on (100)Gaas by Metalorganic Vapor-Phase Epitaxy

Lovergine, N.Liaci, L.Ganiere, J. D.Leo, G.Drigo, A. V.Romanato, F.Mancini, A. M.Vasanelli, L.2007-08-312007-08-312007-08-31199510.1063/1.360656https://infoscience.epfl.ch/handle/20.500.14299/11150WOS:A1995RE58200032MISFIT DISLOCATIONSGAASGROWTHInhomogeneous Strain Relaxation and Defect Distribution of Znte Layers Deposited on (100)Gaas by Metalorganic Vapor-Phase Epitaxytext::journal::journal article::research article