Rudra, A.Carlin, J. F.Ruterana, P.Gailhanou, M.Staehli, J. L.Ilegems, M.2007-08-312007-08-312007-08-31199210.1016/0022-0248(92)90414-Ehttps://infoscience.epfl.ch/handle/20.500.14299/11052WOS:A1992HW83500058We discuss the growth of lattice matched GaInAs, GaInAsP and GaInAsP/GaInAs multiple quantum well structures for high speed laser applications. Optical cavities, including five 90 angstrom GaInAs quantum wells with GaInAsP barriers and waveguides showed a 4 K photoluminescence line width of 8.7 meV. Transmission electron microscopy and X-ray diffraction confirm the good control over the growth of these structures.text::journal::journal article::research article