Tian, HaoLiu, JunqiuSiddharth, AnatBlesin, TerenceKippenberg, Tobias J.Bhave, Sunil A.2021-07-312021-07-312021-07-312021-01-0110.1109/MEMS51782.2021.9375395https://infoscience.epfl.ch/handle/20.500.14299/180290WOS:000667731600050Silicon Nitride integrated photonic circuits have drawn much attention owing to its ultra-low loss and large Kerr nonlinearity. However, the lack of Pockels effect makes it difficult to be modulated clectro-optically, which posts a major challenge for the further development of Si3N4 circuits with advanced functions. The widely adopted thermo-optical tuning suffers from large power consumption and restricted speed (similar to 1 kHz). In this study, microwave frequency modulation (up to 9 GHz) of Si3N4 ring resonator is achieved by exciting bulk acoustic waves piezoelectrically, which modulates the microring via stress-optical effect. The acoustic waves are confined tightly in a released SiO2 thin film which enhances the acoustic energy density and thus modulation efficiency.Engineering, Electrical & ElectronicEngineering, MechanicalNanoscience & NanotechnologyEngineeringScience & Technology - Other Topicsacousto-optic modulatorreleased hbarsi3n4 microringsilicon-nitridetext::conference output::conference proceedings::conference paper