Seif, Johannes P.Niesen, BjoernTomasi, AndreaBallif, ChristopheDe Wolf, Stefaan2017-05-302017-05-30201710.1063/1.4980047https://infoscience.epfl.ch/handle/20.500.14299/137971WOS:000399689400009Bilayers of intrinsic and doped hydrogenated amorphous silicon, deposited on crystalline silicon (c-Si) surfaces, simultaneously provide contact passivation and carrier collection in silicon heterojunction solar cells. Recently, we have shown that the presence of overlaying transparent conductive oxides can significantly affect the c-Si surface potential induced by these amorphous silicon stacks. Specifically, deposition on the hole-collecting bilayers can result in an undesired weakening of contact passivation, thereby lowering the achievable fill factor in a finished device. We test here a variety of organic semiconductors of different doping levels, overlaying hydrogenated amorphous silicon layers and silicon-based hole collectors, to mitigate this effect. We find that these materials enhance the c-Si surface potential, leading to increased implied fill factors. This opens opportunities for improved device performance. Published by AIP Publishing.text::journal::journal article::research article