Local volume inversion and corner effects in triangular gate-all-around MOSFETs

Moselund, K. E.Bouvet, D.Tschuor, L.Pott, V.Dainesi, P.Ionescu, A. M.2007-05-162007-05-162007-05-16200610.1109/ESSDER.2006.307712.https://infoscience.epfl.ch/handle/20.500.14299/6988WOS:000245038000085Local volume inversion and corner effects in triangular gate-all-around MOSFETstext::conference output::conference proceedings::conference paper