Rytz-Froidevaux, Y.Salathe, R. P.Gilgen, H. H.2009-01-202009-01-202009-01-20198310.1557/PROC-17-29https://infoscience.epfl.ch/handle/20.500.14299/33954The deposition of Ga on quartz substrates by photodissociation of trimethylgallium has been investigated. Light from a frequency doubled Ar-ion laser beam (257.2 nm) was focused onto quartz substrates. The Ar-ion laser was operated under CW or mode-locking conditions. The deposition rate has been investigated as a function of averaged UV power densities in the range of 1.8-1750 W/cm2 and is shown to depend critically on the laser operating mode. For CW operation, the maximum growth rate within the focal zone is limited to 17 Å/s whereas under mode-locking conditions, no saturation is observed and the growth rate increases linearly with the laser power up to 70 Å/s at 1.75 kW/cm2chemical vapour depositiongalliumlaser beam applicationsmetallic thin filmsmetallisationtext::conference output::conference proceedings::conference paper