Coluzza, C.Tuncel, E.Staehli, J. L.Baudat, P. A.Margaritondo, G.McKinley, J. T.Ueda, A.Barnes, A. V.Albridge, R. G.Tolk, N. H.Martin, D.Moriergenoud, F.Dupuy, C.Rudra, A.Ilegems, M.2006-10-032006-10-032006-10-03199210.1103/PhysRevB.46.12834https://infoscience.epfl.ch/handle/20.500.14299/234553We used optical pumping by the Vanderbilt free-electron laser and the technique of internal photoemission to measure with high accuracy the conduction-band discontinuity of semiconductor heterojunction interfaces. The experiment is the first application to our knowledge of a free-electron laser to interface research.INTERNAL PHOTOEMISSIONSCHOTTKY BARRIERSSEMICONDUCTORHETEROJUNCTIONSDISCONTINUITIESHEIGHTSJUNCTIONStext::journal::journal article::research article