Dassonneville, S.Amokrane, A.Sieber, B.Farvacque, J. L.Beaumont, B.Bousquet, V.Gibart, P.Leifer, K.Ganiere, J. D.2007-08-312007-08-312007-08-31199910.1016/S0921-4526(99)00434-2https://infoscience.epfl.ch/handle/20.500.14299/11318WOS:0000844522000332549We describe the first stage of the evolution of CL spectra, intensity and dislocation contrast under low keV electron beam for ELO-GaN with a low dislocation density. The UV and yellow intensities are decreased by beam irradiation. We have observed a broadening of the UV peak towards low energies followed by a red shift. This is explained in terms of an electron beam activation of non-radiative centers which relax partially the compressive strain, The dislocation contrast is lowered, but the dislocations become more non-radiative. We suggest that dislocations are preferential ways for the flux of non-radiative centers from the coalescence boundaries to the bulk. (C) 1999 Elsevier Science B.V. All rights reserved.GaNdislocationscathodoluminescenceCathodoluminescence intensity and dislocation contrast evolutions under electron beam excitation in epitaxial GaN laterally overgrown on (0001) sapphiretext::journal::journal article::research article