Widmer, M.van den Bergh, H.2011-02-012011-02-012011-02-01199510.1063/1.359245https://infoscience.epfl.ch/handle/20.500.14299/63721The photothermal laser induced CVD of Cu from its hexafluoroacetylacetonate trimethylvinylsilane deriv. was studied as a function of added H2O vapor pressure. The height, width, elec. cond., and chem. compn. of the deposited Cu lines are measured. Under anhyd. conditions, the lines were characterized by a low growth rate, high C contamination, and poor elec. resistivity. In the presence of H2O vapor, a high growth rate (1800 mm/min) and high purity Cu lines were obtained with a resistivity ratio of 1.1.7440-50-8 (Copper) Role: FMU (Formationunclassified)PEP (Physicalengineering or chemical process)PRP (Properties)FORM (Formationnonpreparative)PROC (Process) (laser induced pyrolytic deposition of copper from (hexafluoroacetylacetonate)(trlaser pyrolysis copper hexafluoroacetylacetonatetrimethylvinylsilane metal deposition; elec cond copper depositiontext::journal::journal article::research article