Electrical contacts to single nanowires: a scalable method allowing multiple devices on a chip. Application to a single nanowire radial p-i-n junction

Blanc, PierreHeiss, MartinColombo, CarloMallorqui, Anna DalmauSafaei, Tina SaberiKrogstrup, PeterNygard, JesperFontcuberta I. Morral, Anna2013-10-012013-10-012013-10-01201310.1504/Ijnt.2013.053513https://infoscience.epfl.ch/handle/20.500.14299/95991WOS:000318221700004Semiconductor nanowires are currently at the forefront of research in the areas of nanoelectronics and energy conversion. In all these studies, realising electrical contacts and statistically relevant measurements is a key issue. We propose a method that enables to contact hundreds of nanowires on a single wafer in an extremely fast electron beam lithography session. The method is applied to nanowire-based radial GaAs p-i-n junction. Current-voltage characteristics are shown, along with scanning photocurrent mapping.nanotechnologyelectrical contactsnanowiressolar cellradial p-i-n junctionGaAsElectrical contacts to single nanowires: a scalable method allowing multiple devices on a chip. Application to a single nanowire radial p-i-n junctiontext::journal::journal article::research article