Blue lasing at room temperature in an optically pumped lattice-matched AlInN/GaN VCSEL structure

Feltin, E.Christmann, G.Dorsaz, J.Castiglia, A.Carlin, J. F.Butte, R.Grandjean, N.Christopoulos, S.von Hogersthal, G. B. H.Grundy, A. J. D.Lagoudakis, P. G.Baumberg, J. J.2010-10-052010-10-052010-10-05200710.1049/el:20071226https://infoscience.epfl.ch/handle/20.500.14299/55073WOS:000249282200013Laser action with low threshold average pump power density (similar to 50 W. cm(-2)) at room temperature is reported for a crack-free planar vertical cavity surface emitting laser (VCSEL) structure based on a bottom lattice-matched AllnN/GaN distributed Bragg reflector (DBR) and a top dielectric DBR. The cavity region, formed by n- and p-type GaN layers surrounding only three InGaN/GaN quantum wells, corresponds to a typical active region suitable for an electrically driven VCSEL. In addition to low threshold, a spontaneous emission coupling factor beta 2 x 10(-3) is derived for this ready-to-be-processed laser structure.DISTRIBUTED BRAGG REFLECTORSSPONTANEOUS-EMISSIONLASERMICROCAVITIESBlue lasing at room temperature in an optically pumped lattice-matched AlInN/GaN VCSEL structuretext::journal::journal article::research article