Sirbu, A.Pierscinski, K.Mereuta, A.Iakovlev, V.Caliman, A.Micovic, Z.Volet, N.Rautiainen, J.Heikkinen, J.Lyytikainen, J.Rantamaki, A.Okhotnikov, O.Kapon, E.2014-06-232014-06-232014-06-23201410.1117/12.2039692https://infoscience.epfl.ch/handle/20.500.14299/104653WOS:000336041100011Optically pumped wafer fused 1310 nm VECSELs have the advantage of high output power and wavelength agility. Gain mirrors in these lasers are formed by direct bonding of InAlGaAs/InP active cavities to Al(Ga) As/GaAs DBRs. We present for the first time Watt-level 1310 nm wafer-fused VCSELs based on gain mirrors with heat dissipation in the "flip-chip" configuration. Even though output power levels in this approach is lower than with intra-cavity diamond heat-spreaders, the "flip-chip configuration demonstrates higher quality optical emission and is preferable for industrial applications in optical amplifiers, intra-cavity doubled lasers, etc.Wafer fused vertical external cavity surface emitting lasers (VECSELs)optically pumped and electrically pumped VECSELsphotonics technologytext::conference output::conference proceedings::conference paper