Straessle, R.Petremand, Y.Briand, D.Dadras, M.de Rooij, N. F.2013-10-012013-10-012013-10-01201310.1088/0960-1317/23/7/075007https://infoscience.epfl.ch/handle/20.500.14299/95796WOS:000321063300016This paper reports on low-temperature and hermetic thin-film indium bonding for wafer-level encapsulation and packaging of delicate and temperature sensitive devices. This indium-bonding technology enables bonding of surface materials commonly used in MEMS technology. The temperature is kept below 140 degrees C for all process steps and no surface treatment is applied before and during bonding. This bonding technology allows hermetic sealing at 140 degrees C with a leak rate below 4 x 10(-12) mbar l s(-1) at room temperature. The tensile strength of the bonds up to 25 MPa goes along with a very high yield.text::journal::journal article::research article