Corfdir, PierreRistic, JelenaLefebvre, PierreZhu, TiankaiMartin, DenisDussaigne, AmélieGanière, Jean-DanielGrandjean, NicolasDeveaud-Plédran, Benoît2009-05-232009-05-232009-05-23200910.1063/1.3142396https://infoscience.epfl.ch/handle/20.500.14299/40200WOS:000266342800015Time-resolved cathodoluminescence at 27 K has been performed on a-plane GaN grown by epitaxial lateral overgrowth. We detail the relaxation and recombination mechanisms of excitons [free or bound to neutral donors, or bound to I1-type basal stacking faults (BSFs)] in relation to the local density in BSFs. We describe the slow exciton capture rate on isolated BSFs by a diffusion model involving donors via a hopping process. Where BSFs are organized into bundles, we relate the shorter rise time to intra-BSF localization processes and the multiexponential decay to the type-II band alignment of BSFs in wurtzite GaN.cathodoluminescencediffusionexcitonsgallium compoundsIII-V semiconductorssemiconductor epitaxial layersstacking faultstime resolved spectrawide band gap semiconductorstext::journal::journal article::research article