Chavarria, M. A.Fonthal, F.2016-07-192016-07-192016-07-19201610.1149/2.0241604jsshttps://infoscience.epfl.ch/handle/20.500.14299/128013WOS:000373212500025We presented the conduction mechanism investigation of porous silicon/p-Si heterojunction fabricated on low resistivity crystalline silicon by electrochemical anodization. Measurements of the current - voltage I(V) and capacitance - voltage C(V) characteristics were used for the study of the electrical properties of this heterojunction. A deeper understanding of the physical mechanisms involved in the Au/porous silicon contacts and porous silicon/p-Si interface can be obtained from the voltage dependence of the fitting parameters according to electrical model circuits in DC and AC. We found in the heterojunction important conduction mechanisms: the resonant tunnelling, SCLC and the dielectric relaxation due to the pores layers at high frequencies. (c) 2016 The Electrochemical Society. All rights reserved.text::journal::journal article::research article