Despeisse, M.Jarron, P.Johansen, K. M.Moraes, D.Shah, A.Wyrsch, N.2009-02-102009-02-10200510.1016/j.nima.2005.06.012https://infoscience.epfl.ch/handle/20.500.14299/35112Preliminary radiation tests of hydrogenated amorphous silicon n-i-p photodiodes deposited on a coated glass substrate are presented in this paper. These tests have been performed using a 24 GeV proton beam. We report results on the fluence dependence of the diode dark current and of the signal induced by a proton spill. © 2005 Published by Elsevier B.V.text::journal::journal article::research article