8 mW fundamental mode output of wafer-fused VCSELs emitting in the 1550-nm band

Caliman, AndreiMereuta, AlexandruSuruceanu, GrigoreIakovlev, VladimirSirbu, AlexeiKapon, Elyahou2011-08-172011-08-172011-08-17201110.1364/OE.19.016996https://infoscience.epfl.ch/handle/20.500.14299/70129WOS:000294489700026We report record-high fundamental mode output power of 8 mW at 0 °C and 1.5 mW at 100°C achieved with wafer-fused InAlGaAs-InP/AlGaAs-GaAs 1550 nm VCSELs incorporating a re-grown tunnel junction and un-doped AlGaAs/GaAs distributed Bragg reflectors. A broad wavelength tuning range of 15 nm by current variation and wavelength setting in a spectral range of 40 nm on the same VCSEL wafer are demonstrated as well. This performance positions wafer-fused VCSELs as prime candidates for many applications in low power consumption, “green” photonics.Power8 mW fundamental mode output of wafer-fused VCSELs emitting in the 1550-nm bandtext::journal::journal article::research article