Vitale, Wolfgang AmadeusFernández-Bolaños, MontserratMerkel, ReinhardEnayati, AminOcket, IljaDe Raedt, WalterWeber, JosefRamm, PeterIonescu, Mihai Adrian2015-06-022015-06-022015-06-02201510.1109/ECTC.2015.7159650https://infoscience.epfl.ch/handle/20.500.14299/114883The development of interconnections suitable for radio- frequency (RF) and millimeter-wave (mm-wave) applications is of foremost importance for the feasibility of high-quality substrate-integrated devices. For this purpose, we introduce and validate the technology to implement fine-pitch high- aspect ratio tungsten-filled through-silicon vias (W-TSVs) adapted for high-frequency applications. The presented technology is optimized for integration with RF MEMS, for which we propose a compatible fabrication process flow. We designed and characterized RF test structures to assess the quality of the W-TSVs and their suitability for radio- frequency integrated circuits (RFIC) applications, showing low insertion loss for TSV in coplanar waveguides (CPW) and high-performance wideband mm-wave antennas.text::conference output::conference proceedings::conference paper