Moselund, KirstenIonescu, Mihai AdrianPott, VincentKayal, Maher2017-06-132017-06-132017-06-132009https://infoscience.epfl.ch/handle/20.500.14299/138320The present invention exploits the impact ionization induced by drain voltage increase and the onset of a bipolar parasitic in an Omega-gate field effect metal oxide insulator transistor (called PI-MOS), in order to obtain a memory effect and abrupt current switching.Capacitor-less memory and abrupt switch based on hysteresis characteristics in punch-through impact ionization mos transistor (PI-MOS)patentUS200907227940453509