Al0.83In0.17N lattice-matched to GaN used as an optical blocking layer in GaN-based edge emitting lasers

Castiglia, A.Feltin, E.Cosendey, G.Altoukhov, A.Carlin, J. F.Butte, R.Grandjean, N.2010-10-052010-10-052010-10-05200910.1063/1.3138136https://infoscience.epfl.ch/handle/20.500.14299/55048WOS:000266263400077Nitride-based blue laser diode structures with either Al0.83In0.17N/Al0.07Ga0.93N or Al0.87In0.13N bottom claddings have been fabricated and compared to standard structures including solely Al0.07Ga0.93N bottom claddings. Lasing emission at 415 nm is achieved in gain-guided structures at room temperature under pulsed current injection. Devices including the Al0.83In0.17N/Al0.07Ga0.93N bottom cladding exhibit superior device performance. This is a consequence of a better optical mode confinement, as expected from modeling.aluminium compoundscladdingsgallium compoundsIII-Vsemiconductorsindium compoundssemiconductor lasersDEPENDENCEQUALITYDIODESAl0.83In0.17N lattice-matched to GaN used as an optical blocking layer in GaN-based edge emitting laserstext::journal::journal article::research article