Braichotte, D.Van den Bergh, H.2011-02-012011-02-012011-02-011986https://infoscience.epfl.ch/handle/20.500.14299/63650Laser chem. vapor deposition (LCVD) of Pt from Pt bishexafluoroacetylacetonate was studied. The elec. cond. of the metallic deposit was investigated as a function of the writing speed, the vapor pressure of the organometallic compd., and the laser power at 458 and 514 nm. The current-voltage characteristics of Schottky diodes made by LCVD of Pt on n-GaAs was compared for 2 different LCVD mechanisms. Suggestions to optimize the LCVD process are given.1303-00-0 (Gallium arsenide) Role: USES (Uses) (Schottky diodes from platinum film deposition on)65353-51-7 Role: RCT (Reactant)RACT (Reactant or reagent) (film deposition of platinum from laser-induced decompn. of)7440-06-4 (Platinum) Role: PEP (laser deposition platinum conductorSchottky diode platinumcond platinum filmfluoroacetylacetonate platinum laser decompntext::conference output::conference proceedings::conference paper