Zardo, I.Conesa-Boj, S.Estrade, S.Yu, L.Peiro, F.Roca i Cabarrocas, P.Morante, J. R.Arbiol, J.Fontcuberta i Morral, A.2011-12-162011-12-162011-12-16201010.1007/s00339-010-5802-1https://infoscience.epfl.ch/handle/20.500.14299/75412WOS:000279127700042Indium was used as a catalyst for the synthesis of silicon nanowires in a plasma enhanced chemical vapor deposition reactor. In order to foster the catalytic activity of indium, the indium droplets had to be exposed to a hydrogen plasma prior to nanowire growth in a silane plasma. The structure of the nanowires was investigated as a function of the growth conditions by electron microscopy and Raman spectroscopy. The nanowires were found to crystallize along the < 111 >, < 112 > or < 001 > growth direction. When growing on the < 112 > and < 111 > directions, they revealed a similar crystal quality and the presence of a high density of twins along the {111} planes. The high density and periodicity of these twins lead to the formation of hexagonal domains inside the cubic structure. The corresponding Raman signature was found to be a peak at 495 cm(-1), in agreement with previous studies. Finally, electron energy loss spectroscopy indicates an occasional migration of indium during growth.Si NanowiresElectrical-PropertiesThin-FilmsArraysHeterostructuresDevicesAtomsGoldtext::journal::journal article::research article