Dobrijevic, DominikAllport, PhilAsensi, IgnacioBerlea, Dumitru-VladBortoletto, DanielaButtar, CraigDachs, FlorianDao, ValerioDenizli, HalukFlores, LeyreGabrielli, AndreaGonella, LauraGonzalez, VicenteLeBlanc, MattVazquez Nunez, MarcosOyulmaz, KaanPernegger, HeinzPiro, FrancescoRiedler, PetraSandaker, HeidiSolans Sanchez, CarlosSnoeys, WalterSuligoj, Tomislavvan Rijnbach, MilouWeick, JulianWorm, Steven2022-10-242022-10-242022-10-242022-10-0110.1016/j.nima.2022.167226https://infoscience.epfl.ch/handle/20.500.14299/191634WOS:000856914100004The upgrade of the MALTA DMAPS designed in Tower 180 nm CMOS Imaging process will implement the numerous modifications, as well as front-end changes in order to boost the charge collection efficiency after the targeted fluence of 1x10(15) 1 MeVn(eq)/cm(2). The effectiveness of these changes have been demonstrated in recent measurements with a small-scale Mini-MALTA demonstrator chip. Multiple changes in the digital periphery are proposed: The asynchronous address generator will be revised to provide more control over the pulse length. The Synchronization memory will be upgraded with the goal of achieving a sub-nanosecond timing resolution. Serial chip to chip data transfer will be prototyped, in order to gauge the plausibility of implementation on a future full sized chip. Apart from these changes, research of the overall sensor architecture will be discussed as well.Instruments & InstrumentationNuclear Science & TechnologyPhysics, NuclearPhysics, Particles & FieldsPhysicsmonolithic active pixel sensorssilicon detectorsradiation hard electronicsMALTA3: Concepts for a new radiation tolerant sensor in the TowerJazz 180 nm technologytext::journal::journal article::research article