Vertical band-to-band tunneling based non-volatile memory with high-K gate stack and stable hysteresis characteristics up to 400K

Biswas, ArnabTomar, SaurabhIonescu, Adrian M.2016-10-172016-10-172016-10-17201610.1109/DRC.2016.7548493https://infoscience.epfl.ch/handle/20.500.14299/129763WOS:000389535400090Vertical band-to-band tunneling based non-volatile memory with high-K gate stack and stable hysteresis characteristics up to 400Ktext::conference output::conference proceedings::conference paper