Curty, J.-P.Joehl, N.Krummenacher, F.Dehollain, C.Declercq, M. J.2010-05-212010-05-212010-05-21200510.1109/TCSI.2005.8542942-s2.0-29344439166https://infoscience.epfl.ch/handle/20.500.14299/50253WOS:000233946100027This paper proposes a linear two-port model for an N-stage modified-Greinacher full-wave rectifier. It predicts the overall conversion efficiency at Iow power levels where the diodes are operating near their threshold voltage. The output electrical behavior of the rectifier is calculated as a function of the received power and the antenna parameters. Moreover, the two-port parameter values are computed for particular input voltages and output currents for the complete N-stage rectifier circuit using only the measured I-V and C-V characteristics of a single diode. To validate the model a three-stage modified-Greinacher full-wave rectifier was realized in an silicon-on-sapphire (SOS) CMOS 0.5-μm technology. The measurements are in excellent agreement with the values calculated using the presented model. © 2005 IEEE.0.5 micronCMOS technologyN stage rectifier circuitmodified Greinacher full wave rectifiersilicon on sapphiremupower rectifier analysisCMOS integrated circuitsintegrated circuit designintegrated circuit modellingrectifying circuitstwo-port networkstext::journal::journal article::research article