Ionescu, Adrian M.Boucart, KathyMoselund, Kirsten E.Pott, VincentTsamados, Dimitrios2012-07-042012-07-042012-07-04200710.1109/SMICND.2007.4519743https://infoscience.epfl.ch/handle/20.500.14299/83476WOS:000255865200084This paper discusses three categories of small slope electronic switches: the Tunnel FET the IMOS and the NEM-FET which are expected to bring added value compared to CMOS by presenting an abrupt subthreshold slope, smaller than the physical limit, 60mV/decade, of the solid-state MOS transistor at room temperature. Recent results and future promises are reported.Field-Effect TransistorMos I-MosTunneling TransistorSiliconDeviceCircuittext::conference output::conference proceedings::conference paper